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The Characterization of Nanoparticle Element Oxide Slurries Used in Chemical-Mechanical Planarization by Single Particle ICP-MS

Introduction

This study outlines the quantitation and characterization of element oxide nanoparticles (Al2O3, and CeO2) commonly used in the nanoelectronics and semiconductor fabrication industry for the chemical-mechanical planarization (CMP) of semiconductor surfaces. CMP is a process of smoothing surfaces with the combination of chemical and mechanical forces in preparation for photolithography. The process uses various element oxide slurries and pressure to chemically and mechanically polish the silicon wafers during the manufacturing of semiconductor devices. In an effort to reduce size of the electronic device and improve the yield of the manufacturing process, CMP slurries consisting of nanoparticles are now in use.

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