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Fields & Applications Spectroscopy, Materials

Depth Profiling with GD-OES

When I first explored GD-OES some years ago, I was impressed by the capability of the technique to perform depth profiling analysis on solid samples, determining nanometric layers and at the same time going down 150 microns into samples. My background in elemental analysis up until then was limited to inductively coupled plasma (ICP)-OES and atomic absorption, so GD-OES was able to reveal a new world to me. I learnt a lot using GD-OES – not only about the technique itself, but also the added value it lends to material science.

It is unfortunate that, despite many advantages, GD-OES remains a technique that is not well known outside of the material science world. Perhaps because there are more fashionable techniques, such as X-ray photoelectron spectroscopy, secondary ion mass spectrometry or even Auger electron spectroscopy? Or does GD-OES need to bring something over and above those techniques to find its rightful place?

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About the Author

Matthieu Chausseau

Matthieu Chausseau obtained his PhD in Analytical Chemistry at the University of Lyon (France) in 2001 where his work was mainly focused on elemental analysis. From 2001 to 2007, he worked as application scientist for Varian Inc. in France, specializing in ICP-OES and AAS. In 2008, he started at HORIBA Scientific in France as ICP-OES Product Manager for the Center of Excellence. In 2015 he was appointed Application Manager for France, handling responsibilities for ICP-OES, GD-OES, Elemental Analyzers, Ellipsometry, Fluorescence and Raman instruments and working to promote global solutions to customers. He joined HORIBA Scientific in USA in July 2016 as Product Manager for ICP-OES, GD, Elemental Analyzers and Ellipsometry.

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