Depth Profiling with GD-OES
Glow discharge optical emission spectrometry (GDOES) is now able to shed light on layer thickness thanks to differential interferometry profiling (DiP).
Matthieu Chausseau |
When I first explored GD-OES some years ago, I was impressed by the capability of the technique to perform depth profiling analysis on solid samples, determining nanometric layers and at the same time going down 150 microns into samples. My background in elemental analysis up until then was limited to inductively coupled plasma (ICP)-OES and atomic absorption, so GD-OES was able to reveal a new world to me. I learnt a lot using GD-OES – not only about the technique itself, but also the added value it lends to material science.
It is unfortunate that, despite many advantages, GD-OES remains a technique that is not well known outside of the material science world. Perhaps because there are more fashionable techniques, such as X-ray photoelectron spectroscopy, secondary ion mass spectrometry or even Auger electron spectroscopy? Or does GD-OES need to bring something over and above those techniques to find its rightful place?
Read the full article now
Log in or register to read this article in full and gain access to The Analytical Scientist’s entire content archive. It’s FREE and always will be!
Or register now - it’s free and always will be!
You will benefit from:
- Unlimited access to ALL articles
- News, interviews & opinions from leading industry experts
- Receive print (and PDF) copies of The Analytical Scientist magazine
Or Login via Social Media
By clicking on any of the above social media links, you are agreeing to our Privacy Notice.